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參數(shù)資料
| 型號： | CPH5857 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：P溝道MOSFET的硅SBD智能交通：肖特基二極管通用開關設備 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | CPH5857 |
CPH5857
No. A0547-5/6
[SBD]
I
S
20ms
t
70.01
2
3
7 0.1
Time, t -- s
0
5
2
3
7
1.0
5
2
3
3.0
3.5
2.0
1.0
2.5
1.5
0.5
S
ID00338
IFSM -- t
Current waveform 50Hz sine wave
0
0.2
Forward Voltage, VF -- V
PF(AV) -- IO
0.3
0.1
0.4
0.5
0.7
0.6
2
5
7
3
2
0.01
2
5
7
3
0.1
0.001
IT11204
IT11205
10
°
C
7
°
C
5
°
C
2
°
C
0
°
C
-5
°
C
0
0.0001
0.01
0.001
0.1
1.0
10
10000
100
1000
2
4
6
8
10
12
16
14
Ta=150
°
C
125
°
C
100
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
(2) (4) (3)
(1)
0
0
0.2
0.6
0.7
0.5
0.1
0.4
0.3
0.2
0.4
0.6
0.8
1.0
1.2
IT11206
(4)
(3)
(1)
0
8
16
10
12
14
6
4
2
(2)
IT11207
4.0E--0.6
0.0E+00
2.0E--0.6
6.0E--0.6
8.0E--0.6
1.0E--0.5
1.2E--0.5
A
2
5
7
3
3
1.0
T=5
°
C
15
°
C
IF -- VF
F
IR -- VR
R
μ
A
Reverse Voltage, VR -- V
PR(AV) -- VRM
(1)Rectangular wav
e
θ
=60
°
(2)Rectangular wav
e
θ
=120
°
(3)Rectangular wav
e
θ
=180
°
(4)Sine wav
e
θ
=180
°
Average Output Current, IO -- A
Tc -- IO
(1)Rectangular wav
e
θ
=60
°
(2)Rectangular wav
e
θ
=120
°
(3)Rectangular wav
e
θ
=180
°
(4)Sine wav
e
θ
=180
°
A
θ
360
°
Rectangular
wave
180
°
360
°
Sine
wave
Peak Reverse Voltage, VRM -- V
C -- VR
(1)Rectangular wav
e
θ
=300
°
(2)Rectangular wav
e
θ
=240
°
(3)Rectangular wav
e
θ
=180
°
(4)Sine wav
e
θ
=180
°
Rectangular
wave
180
°
360
°
VR
Sine
wave
θ
360
°
VR
IT11208
20
0
0.4
0.2
0.6
0
0.8
1.0
1.2
40
60
80
100
120
140
160
(1)
(2)
(3)
(4)
Reverse Voltage, VR -- V
I
0.1
2
10
100
2
3
5
2
3
5
7
3
5
7
1.0
2
3
5
2
3
7
10
IT10275
Average Output Current, IO -- A
C
°
C
θ
360
°
180
°
360
°
Rectangular
wave
Sine
wave
*When mounted in reliability
operaion board,
Rth(J-a)=183.67
°
C/W
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| CPH5863 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
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| CPH5870 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications |
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