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參數(shù)資料
| 型號： | CPH5857 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：P溝道MOSFET的硅SBD智能交通：肖特基二極管通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | CPH5857 |
CPH5857
No. A0547-2/6
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=
±
8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--800mA
ID=--800mA, VGS=--4V
ID=--400mA, VGS=--2.5V
ID=--70mA, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
VDS=--10V, VGS=--4V, ID=--1.5A
IS=--1.5A, VGS=0V
--20
V
μ
A
μ
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--1
±
10
--1.3
--0.4
1.3
2.3
180
240
350
290
40
25
10
35
32
27
3.2
0.8
0.6
--0.87
235
340
600
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
--1.2
VR
VF1
VF2
IR
C
trr
IR=0.2mA
IF=0.5A
IF=1A
VR=7.5V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
15
V
V
V
μ
A
pF
ns
Forward Voltage
0.44
0.51
0.49
0.56
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
3
20
10
Package Dimensions
unit : mm (typ)
7017A-005
Electrical Connection
5
3
1
2
4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
2
1
4
5
3
2.9
0.05
0.4
2
1
0
0
0
0
0
0.15
0.95
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