參數(shù)資料
型號: CPH5852
廠商: Sanyo Electric Co.,Ltd.
英文描述: MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
中文描述: MOSFET的:P溝道MOSFET的硅SBD智能交通:肖特基二極管
文件頁數(shù): 6/6頁
文件大?。?/td> 60K
代理商: CPH5852
CPH5852
No. A0336-6/6
PS
Note on usage : Since the CPH5852 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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for the SANYO Semiconductor product that you intend to use.
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CPH5852-TL-E 功能描述:MOSFET P-CH 30V 2A CPH5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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