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參數(shù)資料
| 型號： | CMT60N06 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL Logic Level POWER MOSFET |
| 中文描述： | N溝道功率MOSFET的邏輯電平 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 307K |
| 代理商： | CMT60N06 |
Figure 13. Maximum Forward Bias Safe
Operating Area Area
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
Figure 12. Typical Threshold Voltage vs
Junction Temperature
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
Figure 16. Typical Body Diode Transfer
Characteristics
I
D
,
V
G
,
I
D
,
V
G
,
(
B
D
,
T
J
, Junction Temperature (
o
C)
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
o
C)
1.1
1.2
1.0
0.8
0.6
0.5
10000
180
160
140
120
100
80
60
100
10
1
12
8
2
0
1.10
1.05
1.00
0.95
0.90
0.9
0.7
1000
100
-75
-50
-25
0.0
25
50
75
100 125
150
-75
-50
-25
50
100
75
125 150
25
0.0
1
10
100
0.01
0.1
1
10
100
28
26
24
8
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
22
20
18
16
14
12
10
6
4
2
4
6
10
V
GS
= 0V
I
D
= 250 μA
V
GS
= V
DS
, I
D
= 250 μA
T
J
= MAX RATED, T
C
= 25
o
C
Single Pulse
OPERATION IN THIS AREA
MAY BE LIMITED BY
R
DS(ON)
10μS
100μS
1.0mS
10mS
DC
C
OSS
C
RSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
DS
= 15V
I
D
= 12A
V
GS
= 0V
150
o
C
25
o
C
-55
o
C
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
1000
30
40
20
0
CMT60N03
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/24
Preliminary
Champion Microelectronic Corporation
Page
6
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