參數(shù)資料
型號: CMT60N06
廠商: Electronic Theatre Controls, Inc.
英文描述: N-CHANNEL Logic Level POWER MOSFET
中文描述: N溝道功率MOSFET的邏輯電平
文件頁數(shù): 4/8頁
文件大小: 307K
代理商: CMT60N06
t
p
, Rectangular Pulse Duration (Seconds)
T
C
, Case Temperature (
o
C)
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
P
D
,
T
C
, Case Temperature (
o
C)
V
DS
, Drain-to-Source Voltage (V)
40
50
I
D
,
I
D
,
R
D
,
O
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Typical Output Characteristics
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
25
20
15
10
5
0
60
30
50
20
10
40
1.00
0.10
0.01
0
30
20
10
0
Figure 2. Maximum Power Dissipation
vs Case Temperature
0
5
10
15
20
6
7
8
9
10
25
50
75
100
125
150
25
50
75
100
125
150
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
30
60
0.10
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T
J
=P
DM
x Z
θ
JC
x R
θ
JC
+T
C
20%
10%
5%
2%
single pulse
1%
P
DM
t
1
t
2
V
GS
= 4.5V
V
GS
= 3.7V
V
GS
= 3.5V
PULSE DURATION = 250 μS
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
90
80
70
V
GS
= 2.7V
V
GS
= 3.3V
V
GS
= 4.0V
V
GS
= 10V
V
GS
= 3.0V
V
GS
= 2.5V
100
50%
Duty Cycle
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
4
3
2
I
D
= 7A
I
D
= 14A
I
D
= 28A
I
D
= 55A
5
Z
θ
J
,
T
PULSE DURATION = 250 μS
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
35
CMT60N03
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/24
Preliminary
Champion Microelectronic Corporation
Page
4
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