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參數資料
| 型號： | CMT60N06 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL Logic Level POWER MOSFET |
| 中文描述： | N溝道功率MOSFET的邏輯電平 |
| 文件頁數： | 5/8頁 |
| 文件大?。?/td> | 307K |
| 代理商： | CMT60N06 |
2004/05/24
Preliminary
Champion Microelectronic Corporation
Page
5
Figure 6. Maximum Peak Current Capability
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
1.6
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
t
p
, Pulse Width (Seconds)
I
D
,
10000
100
1
V
GS
, Gate-to-Source Voltage (V)
I
D
,
t
AV
, Time in Avalanche (Seconds)
I
A
,
1000
100
10
1
I
D
, Drain Current (A)
10
T
J
, Junction Temperature (
o
C)
R
R
1.2
1.1
1.0
0.9
0.7
0.8
R
D
,
)
25
30
20
15
10
5
0
Figure 7. Typical Transfer Characteristics
Figure 8. Unclamped Inductive Switching Capability
1E-6
1E-3
10E-3
100E-3
10E-6
100E-6
-75
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
1.0
1.5
2.0
2.5
3.0
3.5
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
100
300
350
400
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I
25
150
TC
–
125
=
PULSE DURATION = 250 μS
DUTY CYCLE = 0.5% MAX
VDS = 15V
+150
o
C
+25
o
C
-55
o
C
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
V
GS
= 10V
PULSE DURATION = 250 μS
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 15A
1000
4.0
V
GS
= 4.5V
1.5
1.4
1.3
PULSE DURATION = 10 μS
DUTY CYCLE = 0.5% MAX
TC=25°C
If R
≠
0: t
AV
= (L/R) ln[I
AS
×R)/(1.3BV
DSS
-V
DD
)+1]
If R= 0: t
AV
= (L×I
AS
)/(1.3BV
DSS
-V
DD
)
R equals total Series resistance of Drain circuit
10
V
GS
=
10V
CMT60N03
N-C
HANNEL
Logic Level Power M
OSFET
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