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參數(shù)資料
| 型號： | CMT60N06 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL Logic Level POWER MOSFET |
| 中文描述： | N溝道功率MOSFET的邏輯電平 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 307K |
| 代理商： | CMT60N06 |
CMT60N03
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/24
Preliminary
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
CMT60N03N252
CMT60N03N263
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
Package
TO-252
TO-263
.
CMT60N03
Typ
Characteristic
Symbol
Min
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
Breakdown Voltage Temperature Coefficient, Fig.11
(Reference to 25
,
I
D
= 250
Drain-to-Source Leakage Current
(V
DS
= 24 V, V
GS
= 0 V, T
J
= 25
(V
DS
= 24 V, V
GS
= 0 V, T
J
= 125
Gate-to-Source Forward Leakage
(V
GS
= 20 V)
Gate-to-Source Reverse Leakage
(V
GS
= -20 V)
A)
V
DSS
30
V
A)
V
DSS
/
T
J
27
mV/
)
)
I
DSS
1
10
100
μA
I
GSS
nA
I
GSS
-100
nA
ON Characteristics
Gate Threshold Voltage,Fig.12
(V
DS
= V
GS
, I
D
= 250
Static Drain-to-Source On-Resistance, Fig.9,10 (Note 5)
(V
GS
= 10 V, I
D
= 15A)
(V
GS
= 4.5 V, I
D
= 12A)
Forward Transconductance (V
DS
= 15 V, I
D
= 12A) (Note 5)
A)
V
GS(th)
1.0
3.0
V
R
DS(on)
10.8
15.4
28
12.5
m
g
FS
S
Dynamic Characteristics
(V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz)
Fig.14
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate-to-Source Charge
Gate-to-Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
1520
314
152
27.9
14
4.9
4.3
pF
pF
pF
35
19
nC
nC
nC
nC
(V
DS
= 15 V, I
D
= 12 A) (Note 6)
Fig.15
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
10
3.4
36
6.0
16
7.2
34
14
ns
ns
ns
ns
(V
DD
= 15 V, I
D
= 12 A,
V
GS
= 10 V,
R
G
= 1.0
) (Note 6)
ns
ns
ns
ns
(V
DD
= 15 V, I
D
= 12 A,
V
GS
= 4.5V,
R
G
= 1.0
) (Note 6)
Source-Drain Diode Characteristics
Continuous Source Current (Body
Diode Fig.16)
Pulse Source Current (Body Diode)
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Charge
I
S
50
A
Integral pn-diode in MOSFET
I
SM
V
SD
t
rr
Q
rr
Fig.6
1.0
38
46
A
V
ns
nC
(I
S
= 12 A, V
GS
= 0 V)
(I
F
= 12 A, V
GS
= 0 V,
d
i
/d
t
= 100A/μs)
25
31
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