參數(shù)資料
型號(hào)： CGY2106TS
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： High dynamic range dual LNA MMIC
中文描述： 800 MHz - 920 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： PLASTIC, SOT369-1, SSOP-16
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 94K
代理商： CGY2106TS
2000 Aug 28
9
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
handbook, halfpage
(dB)
0.5
1.5
25
20
15
10
5
0.7
f (GHz)
0.9
1.1
1.3
FCA116
Fig.9 S
12
as a function of frequency.
V
supply
= 5 V; V
neg
=
5 V.
handbook, halfpage
(dB)
0.5
1.5
25
20
15
10
5
0.7
f (GHz)
0.9
1.1
1.3
FCA117
Fig.10 S
22
as a function of frequency.
V
supply
= 5 V; V
neg
=
5 V.
handbook, halfpage
ISOi-i
(dB)
0.5
0.7
f (GHz)
1.5
10
30
40
20
0.9
1.1
1.3
FCA118
Fig.11 Isolation between RF inputs as a function of
frequency.
V
supply
= 5 V; V
neg
=
5 V.
handbook, halfpage
20
10
0
10
10
0
Po
(dBm)
Pi (dBm)
10
FCA119
Fig.12 RF output power as a function of RF input
power.
V
supply
= 5 V; V
neg
=
5 V.
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