參數(shù)資料
型號: CGY2106TS
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: High dynamic range dual LNA MMIC
中文描述: 800 MHz - 920 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SOT369-1, SSOP-16
文件頁數(shù): 2/16頁
文件大?。?/td> 94K
代理商: CGY2106TS
2000 Aug 28
2
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
FEATURES
Dual Low Noise Amplifier (LNA) Monolithic Microwave
Integrated Circuit (MMIC)
Typical noise figure 0.5 dB
Typical gain of 16.1 dB at 860 MHz
Input IP3 of 14 dBm at 860 MHz
Low current (78 mA per channel at 2.0 V)
Low cost SSOP16 plastic package.
APPLICATIONS
GSM base station.
GENERAL DESCRIPTION
TheCGY2106TSisadualGalliumArsenide(GaAs)MMIC
amplifier designed for very low noise figure applications,
where high linearity is also required.
Excellent tracking between the two amplifiers is obtained.
Gain and noise figure variations are well controlled with
temperature.
The device is suitable for use in GSM base stations and
other applications where high gain linearity and very low
noise are required.
The application board might need to be rematched for
optimum performance.
ORDERING INFORMATION
BLOCK DIAGRAM
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2106TS
SSOP16
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
handbook, full pagewidth
FCA108
16
13
12
9
VS2
VS1
VG2
VG1
CGY2106TS
1, 2,
14, 15
7, 8,
10, 11
3
6
4, 5
IN2
IN1
n.c.
OUT2
OUT1
Fig.1 Block diagram.
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