參數(shù)資料
型號: CGY2106TS
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: High dynamic range dual LNA MMIC
中文描述: 800 MHz - 920 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SOT369-1, SSOP-16
文件頁數(shù): 4/16頁
文件大?。?/td> 94K
代理商: CGY2106TS
2000 Aug 28
4
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
DC CHARACTERISTICS FROM JUNCTION TO AMBIENT
T
amb
= 25
°
C; unless otherwise specified. Parameters are guaranteed when using external components and application
board shown in Chapter “Test and application information”.
AC CHARACTERISTICS
V
supply
= 5.0 V; V
neg
=
5.0 V; both LNAs biased and Z
o
= 50
; duty cycle 100%; T
amb
= 25
°
C. Parameters are
guaranteed when using external components and application board shown in chapter “Test and application information”;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
I
supply
positive supply voltage currents (for each LNA)
V
supply
= 5.0 V;
V
neg
=
5.0 V
V
supply
= 5.0 V;
V
neg
=
5.0 V
64
78
86
mA
I
neg
negative supply voltage currents (for each LNA)
0.8
1.1
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
16.1
16.7
20
28
0.5
14
8.5
20
±
0.5
±
0.20
±
0.40
MAX. UNIT
f
G
G
800
ISO
r
ISO
i-i
NF
IP3
i
S
11
S
22
S
21(T)
NF
(T)
IP3
i(T)
frequency
small signal gain
small signal gain at f = 800 MHz
reverse isolation
isolation between inputs
noise figure
input third order intercept point
input reflection coefficient
output reflection coefficient
small signal gain variation with temperature
noise figure variation with temperature
input third order intercept point variation with
temperature
800
14.6
15.8
18
25
11.5
920
17.6
17.6
0.7
MHz
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dB
dB
f =
±
0.5 MHz
50
source
50
load
40
°
C T
amb
< +85
°
C
40
°
C < T
amb
+85
°
C
40
°
C < T
amb
< +85
°
C
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