參數(shù)資料
型號: CGY2106TS
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: High dynamic range dual LNA MMIC
中文描述: 800 MHz - 920 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: PLASTIC, SOT369-1, SSOP-16
文件頁數(shù): 3/16頁
文件大?。?/td> 94K
代理商: CGY2106TS
2000 Aug 28
3
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
PINNING
SYMBOL
PIN
DESCRIPTION
V
S2
1, 2, 14
and 15
3
4, 5
6
7, 8, 10
and 11
9
12
13
16
amplifier 2 source
IN2
n.c.
IN1
V
S1
amplifier 2 input
not connected
amplifier 1 input
amplifier 1 source
OUT1
V
G1
V
G2
OUT2
amplifier 1 drain and output
amplifier 1 gate bias
amplifier 2 gate bias
amplifier 2 drain and output
handbook, halfpage
CGY2106TS
FCA109
1
2
3
4
5
6
7
8
VS2
VS2
IN2
n.c.
n.c.
IN1
VS1
VS1
OUT2
VS2
VS2
VG2
VG1
VS1
VS1
OUT1
16
15
14
13
12
11
10
9
Fig.2 Pin configuration.
LIMITING VALUES
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
voltage difference between OUT1 drain (OUT2 resp.)
and V
S1
source (V
S2
resp.) pins
voltage difference between V
G1
gate (V
G2
resp.) and
V
S1
source (V
S2
resp.) pins
voltage difference between gate V
G1
(V
G2
resp.) and
OUT1 drain (OUT2 resp.) pins
positive supply voltage
5
V
V
GS
3
+1
V
V
GD
7
V
V
supply
see Chapter “Test and
application information”
see Chapter “Test and
application information”
6
V
V
neg
negative supply voltage
6
V
T
amb
T
ch
T
stg
P
tot
ambient temperature
operating channel temperature
storage temperature
total power dissipation
40
+85
150
150
430
°
C
°
C
°
C
mW
T
amb
< 85
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
150
K/W
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