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參數(shù)資料
| 型號(hào)： | CGY2030M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DECT 500 mW power amplifier |
| 中文描述： | 1880 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT369-1, 16 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | CGY2030M |
1997 Jan 17
6
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2030M
APPLICATION INFORMATION
The CGY2030M is operated and tested in accordance with
the circuit diagram shown in Fig.4. Supply voltage
switching is achieved by two bipolar PNP transistors.
One transistor switches the first and second stages and
the other switches the third and fourth stages.
By switching on the last amplifier stages with some delay
compared to the first stages, it is possible to get the last
stages already self-biased before their supply voltage has
reached its steady state value. This enables smooth power
up-ramping without any power overshoot. A simpler drain
switching circuit can be used if the amplifier is operated
with negative biasing of the pins V
GG1
and V
GG2
.
Fig.4 Evaluation board schematic.
Thickness: 0.8 mm; substrate: FR4;
ε
r
= 4.7.
(1) TRL1: width = 500
μ
m; length = 11200
μ
m.
(2) TRL2: width = 500
μ
m; length = 7770
μ
m.
(3) TRL3: width = 300
μ
m; length = 15450
μ
m.
(4) TRL4: width = 1600
μ
m; length = 12000
μ
m.
(5) TRL5: width = 1600
μ
m; length = 11000
μ
m.
handbook, full pagewidth
MGG166
10 k
10 k
100
Zc = 50
Zc = 50
1
3.3
330
8
7
6
5
CGY2030M
4
3
2
1
9
10
11
12
13
14
15
16
VGG2
VGG2
GND
GND
GND
GND
GND
GND
RFO/
VDD4
VDD3
VGG1
VGG1
RFI
GND
GND
GND
VDD1
VDD2
1.5 pF
PA output
ramp
Vbat
DTC11YE
BC858
BC807
PA input
1.8 pF
TRL5
(5)
TRL3
(3)
TRL2
(2)
TRL1
(1)
TRL4
(4)
10 pF
10 pF
22 pF
6.8
pF
100
μ
F
68
pF
10
nF
6.8 pF
100
nF
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