參數(shù)資料
型號(hào)： CGY2030M
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： DECT 500 mW power amplifier
中文描述： 1880 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝： PLASTIC, SOT369-1, 16 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 93K
代理商： CGY2030M
1997 Jan 17
5
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2030M
AC CHARACTERISTICS
V
DD
= 3.2 V; f
RF
= 1900 MHz; P
i
= 0 dBm; T
amb
= 25
°
C; duty factor
δ
= 25%; 50
impedance system; measured and
guaranteed on CGY2030M evaluation board (see Fig.4).
Notes
1.
2.
Self biasing guaranteed in mode 1 at minimum input power (
3 dBm) and minimum supply voltage V
DD
(2.6 V).
The device is adjusted to provide nominal value of load power into a 50
load. The device is switched off and a 6 : 1
load replaces the 50
load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
SYMBOL
PARAMETER
CONDITIONS
MIN.
3
TYP.
MAX.
UNIT
P
i
δ
f
RF
input power
duty factor
operating frequency
note 1
1900
+5
25
dBm
%
MHz
Measured in mode 1; without negative biasing; V
GG1
and V
GG2
connected to ground
P
o
η
P
leak
H2, H3
Stab
output power
efficiency
RF leakage to output in power off state
second and third harmonics level
stability (spurious levels)
26
27
40
40
35
60
28.5
dBm
%
dBm
dBc
dBc
V
DD
= 0 V
note 2
Measured in mode 2; with negative biasing at pins V
GG1
and V
GG2
P
o
η
P
leak
output power
efficiency
RF leakage to output in power off state
25.5
26.5
35
50
28
dBm
%
dBm
V
DD
= 0 V
Fig.3 Typical power and current characteristics in mode 1.
handbook, halfpage
28
24
20
650
550
450
350
2
3
5
4
VDD (V)
Po
(dBm)
Po
IDD
(mA)
IDD
MGG165
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