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參數(shù)資料
| 型號(hào)： | CGY2030M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | DECT 500 mW power amplifier |
| 中文描述： | 1880 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT369-1, 16 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | CGY2030M |
1997 Jan 17
3
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2030M
PINNING
SYMBOL
PIN
DESCRIPTION
V
GG2
1
fourth stage negative gate
supply voltage
ground
second stage supply voltage
ground
first stage supply voltage
PA input
first second and third stages
negative gate supply voltage
11 and 12 ground
13
third stage supply voltage
14 and 15 ground
16
PA output and fourth stage
supply voltage
GND
V
DD2
GND
V
DD1
RFI
V
GG1
2 to 4
5
6 and 7
8
9
10
GND
V
DD3
GND
RFO/V
DD4
Fig.2 Pin configuration.
handbook, halfpage
CGY2030M
MBG630
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VGG2
GND
GND
GND
GND
GND
GND
RFO/VDD4
VDD3
VGG1
RFI
GND
GND
GND
VDD1
VDD2
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2030M is a 4-stage GaAs MESFET power
amplifier capable of delivering 500 mW (typ.) at 1.9 GHz
into a 50
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
The amplifier can be switched off by means of an external
PNP series switch connected between the battery and the
amplifier drains. This switch can also be used to vary the
actual supply voltage applied to the amplifier and hence,
control the output power.
This device is specifically designed to work with a
maximum duty factor of 25%.
Biasing
Two modes of operation are possible:
Mode 1
Mode 2.
M
ODE
1
In the first mode, the pins V
GG1
and V
GG2
are simply
connected together to the ground via resistors (10 k
in
the evaluation board; see Fig.4). The amplifier biases itself
internally to a negative voltage by action of the incoming
RF signal. In this mode, power control cannot be achieved
by varying the amplifier supply voltage; therefore it is
suitable only for applications where power control is not
required such as DECT.
M
ODE
2
If a negative bias is available, a second mode of operation
is possible, in which the amplifier is biased by providing
adequate negative voltages at pins V
GG1
and V
GG2
. In this
mode, the amplifier internal bias does not depend on the
incoming RF level, nor on the drain voltage, so that power
control is possible by variation of the supply voltage.
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