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參數(shù)資料
| 型號： | CGY2030M |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | DECT 500 mW power amplifier |
| 中文描述： | 1880 MHz - 2000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT369-1, 16 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | CGY2030M |
1997 Jan 17
4
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2030M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with “MIL STD 883C - method 3015”
DC CHARACTERISTICS
V
DD
= 3.2 V; T
amb
= 25
°
C; unless otherwise specified.
Notes
1.
2.
Negative voltages V
GG1
and V
GG2
must be applied before supply voltage V
DD
.
Due to non linear effects at high power levels, the gate current can be either negative or positive.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DD
V
DD
V
GG
operating supply voltage
voltage difference between supply voltage
and gate bias voltage
maximum operating junction temperature
total power dissipation
IC storage temperature
5.2
8
V
V
no input signal
T
j(max)
P
tot
T
stg
55
150
400
+125
°
C
mW
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
145
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins RFO/V
DD4,
V
DD3
, V
DD2
and V
DD1
V
DD
I
DD
positive supply voltage
positive peak supply current
2.6
3.2
400
4.2
500
V
mA
Pins V
GG1
and V
GG2
; in mode 2
V
GG1
V
GG2
I
GG(tot)
bias voltage for input stages
bias voltage for output stage
total gate peak current
note 1
note 1
note 2
1
1.2
2.0
+1
V
V
mA
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