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參數資料
| 型號： | CGY2013G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM 4 W power amplifier |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 86K |
| 代理商： | CGY2013G |
1998 Jan 23
5
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
CGY2013G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
THERMAL CHARACTERISTICS
General operating conditions applied.
Note
1.
This thermal resistance is measured under GSM pulse conditions.
DC CHARACTERISTICS
V
DD
= 3.6 V; T
amb
= 25
°
C; general operating conditions applied; peak current values during burst; unless otherwise
specified.
Note
1.
The negative bias V
GG1
and V
GG2
must be applied 10
μ
s before the power amplifier is switched on, and must remain
applied until the power amplifier has been switched off.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DD
V
GG
T
j(max)
T
stg
P
tot
positive supply voltage
negative supply voltage
maximum operating junction temperature
IC storage temperature
total power dissipation
7
10
150
150
1.5
V
V
°
C
°
C
W
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-c
thermal resistance from junction to case; note 1
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins RFO/V
DD4,
V
DD3
, V
DD2
, V
DD1
and DETO/V
DD5
V
DD
I
DD
positive supply voltage
positive peak supply current
0
3.6
2.4
5.5
3.0
V
A
Pins V
GG1
and V
GG2
V
GG1
V
GG2
I
GG1
+ I
GG2
negative supply voltage
negative supply voltage
negative peak supply current
note 1
note 1
1.8
1.8
2.5
5
V
V
mA
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