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參數(shù)資料
| 型號： | CGY2013G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM 4 W power amplifier |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 86K |
| 代理商： | CGY2013G |
1998 Jan 23
3
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
CGY2013G
BLOCK DIAGRAM
PINNING
SYMBOL
PIN
DESCRIPTION
GND
RFO/V
DD4
GND
DETO/V
DD5
V
GG2
GND
RFI
GND
V
DD1
GND
V
GG1
GND
V
DD2
GND
V
DD3
GND
1 to 4
5 to 8
9 to 17
18
19
20 to 26
27
28
29
30
31
32
33
34 to 41
42
43 to 48
ground
power amplifier output and fourth stage supply voltage
ground
power sensor output and supply voltage
fourth stage negative gate supply voltage
ground
power amplifier input
ground
first stage supply voltage
ground
first three stages negative gate supply voltage
ground
second stage supply voltage
ground
third stage supply voltage
ground
Fig.1 Block diagram.
(1) Ground pins 1 to 4, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
handbook, full pagewidth
CGY2013G
MGD627
(1)
31
19
18
5,6,7,8
29
33
42
27
GND
SENSOR
DRIVER
VGG1
VGG2
RFO/VDD4
VDD1
VDD2
VDD3
RFI
DETO/VDD5
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