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| 型號(hào)： | CGY2013G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM 4 W power amplifier |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-313-2, PLASTIC, LQFP-48 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 86K |
| 代理商： | CGY2013G |
1998 Jan 23
4
Philips Semiconductors
Preliminary specification
GSM 4 W power amplifier
CGY2013G
Fig.2 Pin configuration.
handbook, full pagewidth
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CGY2013G
MGD628
GND
GND
GND
VDD2
VGG1
GND
VDD1
GND
RFI
GND
GND
GND
GND
GND
GND
RFO/VDD4
RFO/VDD4
RFO/VDD4
GND
GND
GND
GND
GND
G
G
G
G
G
V
G
G
G
G
G
G
RFO/VDD4
G
G
G
G
D
V
G
G
G
G
G
G
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2013G is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the “ETS 300 577 specification” which are
defined as follows:
t
on
= 542.8
μ
s
T = 4.3 ms
Duty cycle = 1/8.
The device is specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.
Power amplifier
The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.
The amplifier bias is set using a negative voltage applied
at pins V
GG1
and V
GG2
. This negative voltage must be
present before the supply voltage is applied to the drains
to avoid current overstress for the amplifier.
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| CGY2021G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:DCS/PCS 2 W power amplifier |
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