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參數(shù)資料
| 型號(hào)： | CGY2010G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | GSM 4 W power amplifiers |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | CGY2010G |
1996 Jul 08
2
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
FEATURES
Power Amplifier (PA) overall efficiency 45%
35.5 dB gain
0 dBm input power
Gain control range >55 dB
Integrated power sensor driver
Low output noise floor of PA <
129 dBm/Hz in GSM RX
band
Wide operating temperature range
20 to +85
°
C
LQFP 48 pin package
Compatible with power ramping controller PCA5075
Compatible with GSM RF transceiver SA1620.
APPLICATIONS
880 to 915 MHz hand-held transceivers for E-GSM
applications
900 MHz TDMA systems.
GENERAL DESCRIPTION
The CGY2010G and CGY2011G are GSM class 4 GaAs
Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery
supply. These ICs also include a power sensor driver so
that no directional coupler is required in the power control
loop.
Both ICs have the same performance but are issued from
different wafer fabs.
The PAs require only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
They can be switched off and their power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
QUICK REFERENCE DATA
Note
1.
For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
SYMBOL
PARAMETER
(1)
MIN.
TYP.
MAX.
UNIT
V
DD
I
DD
P
out(max)
T
amb
positive supply voltage
positive peak supply current
maximum output power
operating ambient temperature
20
4.2
1.8
35.5
+85
V
A
dBm
ο
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2010G
CGY2011G
LQFP48
plastic low profile quad flat package; 48 leads; body 7
×
7
×
1.4 mm
SOT313-2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CGY2011G | GSM 4 W power amplifiers |
| CGY2013G | GSM 4 W power amplifier |
| CGY2014 | GSM/DCS/PCS power amplifier |
| CGY2014ATW | GSM/DCS/PCS power amplifier |
| CGY2021G | DCS/PCS 2 W power amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CGY2011G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:GSM 4 W power amplifiers |
| CGY2013G | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:GSM 4 W power amplifier |
| CGY2014 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:GSM/DCS/PCS power amplifier |
| CGY2014ATW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:GSM/DCS/PCS power amplifier |
| CGY2014TT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MICROWAVE/MILLIMETER WAVE AMPLIFIER|DUAL|GAAS|TSSOP|20PIN|PLASTIC |
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