參數(shù)資料
型號: CGH35030F
廠商: CREE INC
元件分類: 功率晶體管
英文描述: 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
中文描述: S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
封裝: ROHS COMPLIANT, CERAMIC PACKAGE-2
文件頁數(shù): 6/8頁
文件大?。?/td> 669K
代理商: CGH35030F
6
CGH35030F Rev .4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
3300
5.3 - j8.9
13.3 - j10.0
3400
6.7 - j8.6
12.1 - j8.9
3500
7.7 - j9.3
11.0 - j7.8
3600
7.5 - j10.5
10.2 - j6.6
3700
6.3 - j11.0
9.5 - j5.5
Note
1
: V
= 28V, I
= 120mA. In the 440166 package.
Note
2
: Impedances are extracted from the CGH35030-TB demonstration
circuit and are not source and load pull data off the transistors itself.
Product Dimensions CGH35030F (Package Type — 440166)
D
Z Source
Z Load
G
S
PRELIMINARY
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