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參數(shù)資料
| 型號： | CGH35030F |
| 廠商： | CREE INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| 中文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 669K |
| 代理商： | CGH35030F |
2
CGH35030F Rev .4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V
DSS
V
GS
T
STG
T
J
T
S
84
Volts
Gate-to-Source Voltage
-10, +2
Volts
Storage Temperature
-55, +150
C
Operating Junction Temperature
175
C
Soldering Temperature
245
C
Thermal Resistance, Junction to
Case
1
R
θ
JC
3.7
C/W
Note:
1
Measured for the CGH35030F at 14 W P
DISS
Electrical Characteristics (T
C
= 25C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
4
Gate Threshold Voltage
V
GS(th)
-3.6
-2.5
–
VDC
V
DS
= 10 V, I
D
= 7.2 mA
Gate Quiescent Voltage
V
GS(Q)
–
-2.6
–
VDC
V
DS
= 28 V, I
D
= 120 mA
Saturated Drain Current
I
DS
4.8
5.4
-
A
V
DS
= 6.0 V, V
GS
= 2 V
Drain-Source Breakdown Voltage
V
BR
84
100
–
VDC
V
GS
= -8 V, I
D
= 7.2 mA
Forward Transconductance
g
m
1200
1300
–
mS
V
DS
= 28 V, I
D
= 2 A
Case Operating Temperature
T
C
-10
-
+105
C
Screw Torque
T
-
-
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics
2,3
(T
C
= 25
C, F
0
= 3.6 GHz unless otherwise noted)
Small Signal Gain
G
SS
10.0
10.7
-
dB
V
DD
= 28 V, I
DQ
= 120 mA
Drain Efficiency
1
η
20.0
22.5
–
%
V
DD
= 28 V, I
DQ
= 120 mA, P
AVE
= 4 W
Back-Off Error Vector Magnitude
EVM
1
–
2.3
–
%
V
DD
= 28 V, I
DQ
= 120 mA,
P
AVE
= 21 dBm
Error Vector Magnitude
EVM
2
–
2.0
–
V
DD
= 28 V, I
DQ
= 120 mA, P
AVE
= 4 W
Output Mismatch Stress
VSWR
-
TBD
-
Y
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 120 mA
Dynamic Characteristics
Input Capacitance
C
GS
–
9.3
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
C
DS
–
2.0
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
C
GD
–
0.9
–
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Drain Efficiency = P
OUT
/ P
DC
2
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding
Type RS-CC, Coding Rate Type 2/3.
3
Measured in the CGH35030F test fixture.
4
Measured on wafer prior to packaging.
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