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參數(shù)資料
| 型號(hào)： | CGH35030F |
| 廠商： | CREE INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX |
| 中文描述： | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 669K |
| 代理商： | CGH35030F |
5
CGH35030F Rev .4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless
Copyright 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH35030F-TB Demonstration
Amplifier Circuit
Bill of Materials
Designator
Description
Qty
R1
RES,1/16W,0603,1%,100 OHMS
1
R2
RES,1/16W,0603,1%,47 OHMS
1
CAP, 470PF, 10%,100V, 0603
1
C17
CAP, 33 UF, 20%, G CASE
1
C16
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C8
CAP 10UF 16V TANTALUM
1
C13
CAP, 100.0pF, +/-5%, 0603
1
C1
CAP, 0.8pF, +/-0.05pF, 0603
1
C2,C9,C10
CAP, 0.7pF, +/-0.05pF, 0603
3
C4,C11
CAP, 10.0pF,+/-5%, 0603
2
C5,C12
CAP, 39pF, +/-5%, 0603
2
C7,C14
CAP,33000PF, 0805,100V, X7R
2
J3,J4
CONN SMA STR PANEL JACK RECP
1
J2
HEADER RT>PLZ.1CEN LK 2 POS
1
J1
HEADER RT>PLZ .1CEN LK 5POS
1
Q1
CGH35030F
1
CGH35030F-TB Demonstration
Amplifier Circuit
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