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參數(shù)資料
| 型號： | CEU01N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | CEU01N6 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= 250
μ
A
600
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600V, V
GS
= 0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
30V, V
DS
= 0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 0.65A
7.5
g
2
E
AS
I
AS
V
DD
=50V, L=95mH
R
G
=25
A
mJ
CED01N6/CEU01N6
1.3
90
5.5
0.9
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=50V, I
D
= 0.65A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=300V,
I
D
= 1A,
V
GS
= 10V
R
GEN
=25
6
18
ns
ns
ns
ns
25
50
10
20
30
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=480V, I
D
= 1A,
V
GS
=10V
8
12
nC
nC
nC
Fall Time
1.3
3
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