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參數(shù)資料
| 型號(hào)： | CEU01N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | CEU01N6 |
600
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.3A , R
DS(ON)
=7.5
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
@V
GS
=10V.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
Drain Current-Pulsed
Drain-Source Diode Forward Current
1.3
0.85
A
A
I
DM
I
S
A
1.3
35
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperautre Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3.5
50
/W
C
/W
C
@Tc=25 C
Derate above 25 C
0.29
Drain Current-Continuous (Tc=25 C)
-Continuous (Tc=100 C)
S
G
D
1
PRELIMINARY
3.9
CED01N6/CEU01N6
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
I
D
相關(guān)PDF資料 |
PDF描述 |
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| CED01N6 | 600V N Channel MOS |
| CEU1012 | 120V N Channel MOS |
| CED1012 | 120V N Channel MOS |
| CEU9926 | 20V N Channel MOS |
| CED9926 | 20V N Channel MOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEU01N65 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU01N65A | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU01N6G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU01N7 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEU02N6 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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