參數(shù)資料
型號(hào): CED1012
英文描述: 120V N Channel MOS
中文描述: 120伏特?頻道馬鞍山
文件頁數(shù): 1/5頁
文件大小: 39K
代理商: CED1012
120
N-Channel Enhancement Mode Field Transistor
FEATURES
120V , 10A , R
DS(ON)
=120m
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
@V
GS
=10V
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
10
A
I
DM
40
A
Drain-Source Diode Forward Current
I
S
10
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
/W
C
/W
C
CED1012/CEU1012
@Tc=25 C
Derate above 25 C
50
0.3
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6-2
6
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