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參數(shù)資料
| 型號： | CES2303 |
| 英文描述： | -30V P Channel MOS |
| 中文描述： | - 30V的P通道馬鞍山 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 52K |
| 代理商： | CES2303 |
Parameter
Symbol
Condition
Min Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =-1.6A
-1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 5sec.
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
-V
DS
, Drain-to Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
C
-
D
,
-
D
,
7
3
CES2301
0
4
8
12
16
20
Ciss
Coss
Crss
800
600
400
200
0
8
6
4
2
0
0
1
2
3
4
5
V
GS
=4.5,4,3V
V
GS
=1.5V
V
GS
=2.5V
V
GS
=2.0V
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
-55 C
Tj=125 C
25 C
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=-4.5V
I
D
=-2.8A
R
D
,
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CES2304 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CES2305 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CES2307 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CES2308 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CES2309 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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