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參數(shù)資料
| 型號： | CED1012 |
| 英文描述： | 120V N Channel MOS |
| 中文描述： | 120伏特?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 39K |
| 代理商： | CED1012 |
CED1012/CEU1012
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250
μ
A
=
120
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
120V, V
GS
0V
=
V
GS
=
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
20V, V
DS
=0V
=
=
=
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250
μ
A
=
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
10V, I
D
10A
120
m
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
10
3
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=5A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
950
P
F
170
P
F
P
F
65
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V,
I
D
=10A,
V
GS
= 5V,
R
GEN
=51
60
ns
ns
ns
ns
120
80
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=96V, I
D
= 10A,
V
GS
=10V
57
nC
nC
nC
5
16
Fall Time
6-3
6
47.5
100
5
35
56
85
40
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| CED12N10_08 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED12N10L | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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