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參數(shù)資料
| 型號(hào)： | CE77 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Semicustom CMOS Embedded array |
| 中文描述： | 半定制嵌入式陣列的CMOS |
| 文件頁(yè)數(shù)： | 14/24頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | CE77 |
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CE77 Series
14
Dual power supply
:
V
DDE
=
2.5 V
/
V
DDI
=
2.5 V
,
1.8 V
,
1.5 V
(V
DDE
=
2.5 V
±
0.2 V/V
DDI
=
1.8 V
±
0.15 V, 1.5 V
±
0.1 V, V
SS
=
0 V, T
j
=
40
°
C to
+
125
°
C)
*1:When the memory is in a standby mode and analog macro is in a power-down mode. At both cases, conditions
are V
IH
=
V
DD
, V
IL
=
V
SS
, and T
j
=
+
25
°
C. The above values may not be guaranteed when the input buffer with a
pull-up/pull-down resistor or a crystal oscillator buffer is used.
*2:Refer to “(2) 2.5 V” in
■
V-I CHARACTERISTICS.
*3:Refer to “(3) 1.8 V” in
■
V-I CHARACTERISTICS“.
*4:Refer to “(4) 1.5 V” in
■
V-I CHARACTERISTICS.
Parameter
Symbol
Conditions
Value
Unit
Min
Typ
Max
Power supply current*
1
I
DDS
T2
0.1
mA
T3, T4
0.2
T5 to T7
0.3
T8, T9
0.4
TA
0.5
TB, TC
0.6
TD
0.8
TE
1.0
TF
1.1
TG
2.5 V output I
OH
=
100
μ
A
1.8 V output I
OH
=
100
μ
A
1.5 V output I
OH
=
100
μ
A
2.5 V output I
OL
=
100
μ
A
1.8 V output I
OL
=
100
μ
A
1.5 V output I
OL
=
100
μ
A
2.5 V V
DDE
=
2.5 V
±
0.2 V
1.8 V V
DDI
=
1.8 V
±
0.15 V
1.5 V V
DDI
=
1.5 V
±
0.1 V
2.5 V V
DDE
=
2.5 V
±
0.2 V
1.8 V V
DDI
=
1.8 V
±
0.15 V
1.5 V V
DDI
=
1.5 V
±
0.1 V
1.3
“H” level output voltage
V
OH3
V
DDE
0.2
V
DDI
0.2
V
DDI
0.2
0
V
DDE
V
V
OH2
V
DDI
V
OH1
V
DDI
“L” level output voltage
V
OL3
0.2
V
V
OL2
0
0.2
V
OL1
I
L
0
0.2
±
5
“H” level output
V-I characteristics
*2
*3
*4
“L” level output
V-I characteristics
*2
*3
*4
Input leakage current
μ
A
Pull-up/pull-down
resistance
R
P
2.5 V
Pull-up V
IL
=
0
Pull-down V
IH
=
V
DDE
Pull-up V
IL
=
0
Pull-down V
IH
=
V
DDI
Pull-up V
IL
=
0
Pull-down V
IH
=
V
DDI
10
25
120
k
1.8 V
10
40
120
1.5 V
10
55
120
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