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參數資料
| 型號： | CE77 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Semicustom CMOS Embedded array |
| 中文描述： | 半定制嵌入式陣列的CMOS |
| 文件頁數： | 11/24頁 |
| 文件大?。?/td> | 167K |
| 代理商： | CE77 |
CE77 Series
11
Single power supply
:
V
DD
=
1.8 V
*1 : When the memory is in a standby mode and analog macro is in a power-down mode. At both cases, conditions
are V
IH
=
V
DD
, V
IL
=
V
SS
, and T
j
=
+
25
°
C. The above values may not be guaranteed when the input buffer with
a pull-up/pull-down resistor or a crystal oscillator buffer is used.
*2 : Refer to “(3) 1.8 V” in
■
V-I CHARACTERISTICS.
(V
DD
=
1.8 V
±
0.15 V, V
SS
=
0 V, T
j
=
40
°
C to
+
125
°
C)
Value
Parameter
Symbol
Conditions
Unit
Min
Typ
Max
Power supply current*
1
I
DDS
T2
0.1
mA
T3, T4
0.2
T5 to T7
0.3
T8, T9
0.4
TA
0.5
TB, TC
0.6
TD
0.8
TE
1.0
TF
1.1
TG
I
OH
=
100
μ
A
I
OL
=
100
μ
1.3
“H” level output voltage
V
OH
V
DD
0.2
0
V
DD
V
“L” level output voltage
V
OL
0.2
V
“H” level output voltage
V-I characteristics
1.8 V V
DD
=
1.8 V
±
0.15 V
*2
“L” level output current
V-I characteristics
1.8 V V
DD
=
1.8 V
±
0.15 V
*2
Input leakage current
I
L
±
5
μ
A
Pull-up/pull-down
resistance
R
P
Pull-up V
IL
=
0 V
Pull-down V
IH
=
V
DD
10
40
120
k
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