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參數(shù)資料
| 型號： | CD40100BMS |
| 廠商： | Intersil Corporation |
| 英文描述： | CMOS 32-Stage Static Left/Right Shift Register |
| 中文描述： | 的CMOS 32級靜態(tài)左/右移位寄存器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 65K |
| 代理商： | CD40100BMS |
7-1280
Specifications CD40100BMS
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+7
-
V
Propagation Delay
Clock to Shift Left/Right
Output
TPHL1
TPLH1
VDD = 10V
1, 2, 3
+25
o
C
-
330
ns
VDD = 15V
1, 2, 3
+25
o
C
-
230
ns
Transition Time
TTHL
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Maximum Clock Input
Frequency
FCL
VDD = 10V
1, 2, 3
+25
o
C
2.5
-
MHz
VDD = 15V
1, 2, 3
+25
o
C
3
-
MHz
Minimum Data Setup
Time
TS
VDD = 5V
1, 2, 3
+25
o
C
-
100
ns
VDD = 10V
1, 2, 3
+25
o
C
-
20
ns
VDD = 15V
1, 2, 3
+25
o
C
-
10
ns
Minimum Data Hold Time
TH
VDD = 5V
1, 2, 3
+25
o
C
-
275
ns
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
75
ns
Minimum Clock Pulse
Width Low Level
TWL
VDD = 5V
1, 2, 3
+25
o
C
-
450
ns
VDD = 10V
1, 2, 3
+25
o
C
-
230
ns
VDD = 15V
1, 2, 3
+25
o
C
-
190
ns
Minimum Clock Pulse
Width High Level
TWH
VDD = 5V
1, 2, 3
+25
o
C
-
280
ns
VDD = 10V
1, 2, 3
+25
o
C
-
150
ns
VDD = 15V
1, 2, 3
+25
o
C
-
140
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
25
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
μ
A
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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