參數(shù)資料
型號: CBSL1SL
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.280 INCH, PILL, 4 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 23K
代理商: CBSL1SL
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 1.0 mA
BV
CEO
I
C
= 1.0 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 24 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
UNITS
V
V
V
mA
---
28
3.5
0.5
20
120
C
OB
V
CB
= 24 V
f = 1.0 MHz
5.0
pF
P
G
V
CC
= 24 V
P
OUT
= 1.0 W
I
CQ
= 125 mA f = 960 MHz
10
dB
NPN SILICON RF POWER TRANSISTOR
CBSL1SL
DESCRIPTION:
The
ASI CBSL1SL
is Designed for
Class A, Cellular Base Staion
Applications up to 960 MHz.
FEATURES:
Class A Operation
P
G
= 10 dB at 1.0 W/960 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.250 A
V
CBO
40 V
V
CEO
28 V
V
EBO
3.5 V
P
DISS
7.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
25
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10578
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
inches / mm
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
C
B
E
E
相關PDF資料
PDF描述
CBSL1 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
CBSL2SS 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
CBSL30B 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
CBSL30 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
CBSL60B 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
相關代理商/技術參數(shù)
參數(shù)描述
CBSL2SS 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
CBSL30 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
CBSL30_07 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
CBSL30B 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
CBSL30B_07 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR