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參數(shù)資料
| 型號(hào)： | CBSL30 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-6 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | CBSL30 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 100 mA
BV
CER
I
C
= 40 mA
BV
CEO
I
C
= 40 mA
BV
EBO
I
E
= 10 mA
I
CBO
CE
= 24 V
h
FE
V
CE
= 20 V I
C
= 2.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
48
55
30
40
25
28
3.5
5.0
10
---
15
40
UNITS
V
V
V
mA
---
---
---
---
---
---
100
R
BE
= 150
C
OB
V
CB
= 25 V
f = 1.0 MHz
50
pF
P
G
IMD
3
V
CE
= 25 V
P
OUT
= 30 W f
1
= 860.0 MHz f
2
= 860.1 MHz
I
CQ
= 150 mA f = 860 MHz
7.5
-35
---
dB
dBc
VSWR
1
V
CE
= 25 V VSWR = 20:1
V
CE
= 25 V
±
20% VSWR = 10:1
V
CE
= 25 V
±
20% VSWR = 5:1
P
IN
= P
IN
(norm) +3 dB
V
CE
= 25 V P
IN
(norm) = +5 Db
V
CE
= 25 V
±
20% P
IN
(norm) = +3 dB
No Degradation in
Output Device
Typ.
VSWR
2
No Degradation in
Output Device
Typ.
OVD
No Degradation in
Output Device
Typ.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
CBSL30
The
ASI CBSL30
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
7.5 A
V
CBO
48V
V
CEO
25 V
V
EBO
3.5 V
P
DISS
88 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
3.0
O
C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10582
MINIMUM
inches / mm
.115 / 2.92
.225 / 5.72
.075 / 1.91
.090 / 2.29
.720 / 18.29
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.125 / 3.18
H
.355 / 9.02
.004 / 0.10
DIM
K
L
I
J
.120 / 3.05
.230 / 5.84
.006 / 0.15
.130 / 3.30
.260 / 6.60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G
F
J
C
A
B
2X.130
L
.160 / 4.06
.180 / 4.57
.980 / 24.89
.970 / 24.64
.355 / 9.02
.365 / 9.27
.365 / 9.27
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