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參數(shù)資料
| 型號： | CBSL30B |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | CBSL30B |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CEO
I
C
= 20 mA
BV
EBO
I
E
= 5 mA
I
CBO
V
CB
= 24 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
48
50
25
30
3.5
4.0
20
UNITS
V
V
V
mA
---
---
---
---
1.0
100
C
OB
V
CB
= 24 V
f = 1.0 MHz
25
pF
P
G
V
CC
= 24 V
P
OUT
= 30 W
I
CQ
= 2 X 75 mA f = 960 MHz
7.5
dB
NPN SILICON RF POWER TRANSISTOR
CBSL30B
DESCRIPTION:
The
ASI CBSL30B
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CBO
48 V
V
CES
45 V
V
EBO
4.0 V
P
DISS
43 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
3.0
O
C/W
PACKAGE STYLE .250 BAL FLG
ORDER CODE: ASI10583
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.670 / 17.01
.255 / 6.48
.125 / 3.18
H
DIM
K
L
I
J
.315 / 8.00
.002 / 0.05
.075 1.91
.327 / 8.31
.006 / 0.15
.095 / 2.41
N
M
.245 / 6.22
.257 / 6.53
.060 / 1.52
.092 / 2.34
.055 / 1.40
.065 / 1.65
.190 / 4.83
K
.020 x 45°
J
F
E
D
C
H
I
G
L
M
N
B
A
.130 N.050 x 45°
.065 / 1.65
.555 / 14.10
.739 / 18.77
.565 / 14.35
.750 / 19.05
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