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參數(shù)資料
| 型號(hào)： | CBSL2SS |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CBSL2SS |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CBO
I
C
= 1.0 mA
BV
CER
I
C
= 5.0 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
45
30
UNITS
V
V
R
BE
= 220
3.5
V
500
μ
A
---
20
120
C
OB
V
CB
= 24 V
f = 1.0 MHz
3.5
pF
P
G
η
C
V
CC
= 24 V
P
OUT
= 2.0 V f = 960 MHz
9.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
CBSL2SS
DESCRIPTION:
The
ASI CBSL2SS
is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
Pg
= 9.0 dB min. @ 960 MHz
P
1dB
= 2.0 Watts min. at 960 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
2.0 A
V
CBO
45 V
V
CER
30 V
V
EBO
3.5 V
P
DISS
7.0 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
25
°
C/W
PACKAGE STYLE .205 4L STUD
ORDER CODE: ASI10868
E
A
B
H
E
F
.098 / 2.500
.161 / 4.100
.028 / 0.700
.976 / 24.800
.138 / 3.500
.976 / 24.800
inches / mm
MINIMUM
A
G
F
E
D
C
B
1.000 / 25.4000
.110 / 2.800
.196 / 5.000
1.000 / 25.4000
MAXIMUM
inches / mm
.031 / 0.800
C
D
H
I
J
.200 / 5.100
.425 / 10.800
.004 / 0.100
.006 / 0.150
.465 / 11.800
2.05 / 5.200
G
J
#8-32UNC
.200 / 5.100
.208 / 5.300
DIM
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