參數(shù)資料
型號(hào): C106D1
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor(4A(均方根值),400V敏感門硅控整流器反向截止晶閘管)
中文描述: 4 A, 400 V, SCR, TO-225AA
封裝: CASE 77-09, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 87K
代理商: C106D1
C106 Series
http://onsemi.com
4
1
100
95
–40 –25
–10
20
5
35
50
80
10
110
TJ, JUNCTION TEMPERATURE (
°
C)
65
G
I
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
0.9
0.2
0.3
0.4
0.7
1.0
0.8
95
–45 –25
–10
20
5
35
50
80
0.6
110
TJ, JUNCTION TEMPERATURE (
°
C)
0.5
65
G
V
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
,
10
1000
95
–40 –25
–10
20
5
35
50
80
100
110
TJ, JUNCTION TEMPERATURE (
°
C)
65
H
I
10
1000
95
–40 –25
–10
20
5
35
50
80
100
110
TJ, JUNCTION TEMPERATURE (
°
C)
65
L
,
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
C106D1G 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106D2 制造商:General Electric Company 功能描述:
C106DG 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106DG 制造商:ON Semiconductor 功能描述:SCR THYRISTOR 4A 400V TO-225AA
C106E 制造商:GESS 制造商全稱:GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers