參數(shù)資料
型號: C106D1
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor(4A(均方根值),400V敏感門硅控整流器反向截止晶閘管)
中文描述: 4 A, 400 V, SCR, TO-225AA
封裝: CASE 77-09, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 87K
代理商: C106D1
C106 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
TL
3.0
°
C/W
Thermal Resistance, Junction to Ambient
75
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
TJ = 25
°
C
TJ = 110
°
C
IDRM, IRRM
10
100
μ
A
μ
A
ON CHARACTERISTICS
Peak Forward On–State Voltage(1)
(IFM = 1 A Peak for C106B, D, & M)
(IFM = 4 A Peak for C106D1, & M1)
Gate Trigger Current (Continuous dc)(2)
(VAK = 6 Vdc, RL = 100 Ohms)
VTM
2.2
Volts
TJ = 25
°
C
TJ = –40
°
C
IGT
15
35
200
500
μ
A
Peak Reverse Gate Voltage (IGR = 10
μ
A)
Gate Trigger Voltage (Continuous dc)(2)
(VAK = 6 Vdc, RL = 100 Ohms)
VGRM
VGT
6.0
Volts
TJ = 25
°
C
TJ = –40
°
C
0.4
0.5
.60
.75
0.8
1.0
Volts
Gate Non–Trigger Voltage (Continuous dc)(2)
(VAK = 12 V, RL = 100 Ohms, TJ = 110
°
C)
VGD
0.2
Volts
Latching Current
(VAK = 12 V, IG = 20 mA)
TJ = 25
°
C
TJ = –40
°
C
IL
.20
.35
5.0
7.0
mA
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
TJ = 25
°
C
TJ = –40
°
C
TJ = +110
°
C
IH
.19
.33
.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off–State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110
°
C)
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
(2) RGK is not included in measurement.
dv/dt
8.0
V/
μ
s
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參數(shù)描述
C106D1G 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106D2 制造商:General Electric Company 功能描述:
C106DG 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
C106DG 制造商:ON Semiconductor 功能描述:SCR THYRISTOR 4A 400V TO-225AA
C106E 制造商:GESS 制造商全稱:GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers