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參數(shù)資料
| 型號(hào)： | C106D1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor(4A（均方根值）,400V敏感門硅控整流器反向截止晶閘管) |
| 中文描述： | 4 A, 400 V, SCR, TO-225AA |
| 封裝： | CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | C106D1 |
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
C106/D
Preferred Device
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(Sine Wave, 50–60 Hz, RGK = 1 k
,
TC = –40
°
to 110
°
C)
C106B
C106D, C106D1
C106M, C106M1
Symbol
Value
Unit
VDRM,
VRRM
200
400
600
Volts
On-State RMS Current
(180
°
Conduction Angles, TC = 80
°
C)
IT(RMS)
4.0
Amps
Average On–State Current
(180
°
Conduction Angles, TC = 80
°
C)
IT(AV)
2.55
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = +110
°
C)
ITSM
20
Amps
Circuit Fusing Considerations (t = 8.3 ms)
I2t
1.65
A2s
Forward Peak Gate Power
(Pulse Width
1.0
μ
sec, TC = 80
°
C)
PGM
0.5
Watt
Forward Average Gate Power
(Pulse Width
1.0
μ
sec, TC = 80
°
C)
PG(AV)
0.1
Watt
Forward Peak Gate Current
(Pulse Width
1.0
μ
sec, TC = 80
°
C)
IGM
0.2
Amp
Operating Junction Temperature Range
TJ
–40 to
+110
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
Mounting Torque(2)
—
6.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
SCRs
4 AMPERES RMS
200 thru 600 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
C106B
TO225AA
500/Box
C106D
TO225AA
http://onsemi.com
500/Box
K
G
A
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
Preferred
devices are recommended choices for future use
and best overall value.
C106D1
TO225AA
500/Box
C106M
TO225AA
500/Box
C106M1
TO225AA
500/Box
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C106 | Sensitive Gate Silicon Controlled Rectifiers |
| C106B | Sensitive Gate Silicon Controlled Rectifiers |
| C106D | RS3-S_D(Z) Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; Power: 3W; 2:1 and 3:1 Wide Input Voltage Ranges; 1kVDC, 2kVDC & 3kVDC Isolation; UL94V-0 Package Material; Continuous Short Circuit Protection; Low Ripple and Noise; Remote On/Off Control; Efficiency to 83% |
| C106M | Sensitive Gate Silicon Controlled Rectifiers |
| C106M1 | Sensitive Gate Silicon Controlled Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C106D1G | 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106D2 | 制造商:General Electric Company 功能描述: |
| C106DG | 功能描述:SCR 400V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106DG | 制造商:ON Semiconductor 功能描述:SCR THYRISTOR 4A 400V TO-225AA |
| C106E | 制造商:GESS 制造商全稱:GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers |
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