參數(shù)資料
型號: BYV32G-200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
中文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
封裝: PLASTIC, TO-262, I2PAK-3
文件頁數(shù): 5/11頁
文件大小: 148K
代理商: BYV32G-200
BYV32G-200
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 11 January 2011
5 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
F
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
I
F
= 20 A; T
j
= 25 °C
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
V
R
= 200 V; T
j
= 100 °C
V
R
= 200 V; T
j
= 25 °C
-
-
-
-
1
0.72
0.2
6
1.15
0.85
0.6
30
V
V
mA
μA
I
R
reverse current
Dynamic characteristics
Q
r
recovered charge
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/μs;
T
j
= 25 °C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
ramp recovery; T
j
= 25 °C; see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; step recovery;
measured at reverse current = 0.25 A;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; dI
F
/dt = 10 A/μs; T
j
= 25 °C;
see
Figure 7
-
8
12.5
nC
t
rr
reverse recovery time
-
20
25
ns
-
10
20
ns
V
FR
forward recovery voltage
-
-
1
V
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Reverse recovery definitions; ramp recovery
0
1.6
1.2
0.4
0.8
003aac981
16
8
24
32
0
V
F
(V)
I
F
(A)
(1)
(2)
(3)
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
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