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參數(shù)資料
| 型號： | BYV32G-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual ultrafast power diode |
| 中文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封裝： | PLASTIC, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 148K |
| 代理商： | BYV32G-200 |
BYV32G-200
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 01 — 11 January 2011
3 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
Conditions
Min
-
-
-
-
Max
200
200
200
20
Unit
V
V
V
A
DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
115 °C;
both diodes conducting; see
Figure 1
;
see
Figure 2
δ
= 0.5 ; t
p
= 25 μs; T
mb
≤
115 °C; per diode
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C;
per diode
δ
= 0.001 ; t
p
= 2 μs
t
p
= 100 μs
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
20
137
A
A
-
125
A
I
RRM
I
RSM
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
-
-
0.2
0.2
A
A
T
stg
T
j
V
ESD
-40
-
-
150
150
8
°C
°C
kV
HBM; C = 250 pF; R = 1.5 k
; all pins
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
12
8
4
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
I
F(AV)
(A)
P
tot
(W)
0
15
10
5
003aac979
5
10
15
0
0.5
0.2
0.1
I
F(AV)
(A)
P
tot
(W)
δ
= 1
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| BYV32G-200,127 | 功能描述:二極管 - 通用，功率，開關(guān) DUAL ULTRAFAST PWR DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BYV34 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual rectifier diodes ultrafast |
| BYV34-300 | 制造商:NXP Semiconductors 功能描述:Rectifier Diode, Common Cathode, 300 Volt, TO-220AB |
| BYV34-300/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE ULTRA FAST 2X10A |
| BYV34300M | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS |
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