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參數(shù)資料
| 型號(hào)： | BUX86P |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 0.5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-82, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | BUX86P |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
UNIT
86P
800
400
87P
1000
450
V
CESM
V
CEO
V
CESAT
I
C
I
CM
P
tot
t
f
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
V
BE
= 0 V
V
V
V
A
A
W
μ
s
I
C
= 0.2 A; I
B
= 20 mA
1
0.5
1
42
-
T
mb
≤
25 C
I
C
B(on)
= 20 mA
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
emitter
2
collector
3
base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
BUX
-
-
-
-
-
-
-
-
-
-40
-
MAX.
UNIT
86P
800
400
87P
1000
450
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
V
BE
= 0 V
V
V
V
A
A
A
A
A
W
C
C
5
0.5
1
0.2
0.3
0.3
42
150
150
T
mb
≤
25 C
1
2
3
b
c
e
1
Turn-off current.
November 1995
1
Rev 1.100
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PDF描述 |
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| BUX87P | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BUX88 | QUAD CHANNEL HIGH SIDE DRIVER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUX86P,127 | 功能描述:兩極晶體管 - BJT BUX86P/SOT82/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUX86P | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-82 |
| BUX86P/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
| BUX87 | 功能描述:兩極晶體管 - BJT NPN High Volt Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUX87-1100 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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