參數(shù)資料
型號(hào)： BUW85
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 94K
代理商： BUW85
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
Fig.4 Forward bias SOAR.
BUW84.
T
mb
≤
25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
≤
100
and t
p
≤
0.6
μ
s.
IV - Repetitive pulse operation in this region is permissible provided V
BE
≤
0 and t
p
≤
2 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
handbook, full pagewidth
MGB938
10
1
10
2
10
3
10
4
VCE (V)
10
10
1
10
3
10
2
IC
(A)
δ
= 0.01
1 ms
2 ms
5 ms
10 ms
DC
100
μ
s
200
μ
s
500
μ
s
tp =
20
μ
s
50
μ
s
III
I
II
IV
(2)
(1)
IC max
ICM max
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BY329-1500S Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
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參數(shù)描述
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BUW89 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 25A I(C) | SOT-93
BUW96 制造商:STMicroelectronics 功能描述:
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