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參數(shù)資料
| 型號(hào)： | BUW85 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | BUW85 |
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW84; BUW85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW84
BUW85
collector-emitter voltage
BUW84
BUW85
emitter-base voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
V
BE
= 0
800
1000
V
V
V
CEO
open base
65
400
450
5
2
3
0.75
1
1
50
+150
150
V
V
V
A
A
A
A
A
W
°
C
°
C
V
EBO
I
C
I
CM
I
B
I
BM
I
BM
P
tot
T
stg
T
j
open collector
see Figs 4 and 5
t
p
= 2 ms; see Figs 4 and 5
T
mb
≤
25
°
C; see Fig.8
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage
BUW84
BUW85
collector-emitter saturation voltage
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 2 and 3
400
450
0.8
V
V
V
V
CEsat
I
C
= 0.3 A; I
B
= 30 mA;
see Fig.7
I
C
= 1 A; I
B
= 200 mA;
see Fig.7
I
C
= 1 A; I
B
= 200 mA
V
CEM
= V
CEMSmax
; V
BE
= 0;
note 1
V
CEM
= V
CEMSmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 A; see Fig.10 15
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
V
CE
= 10 V; I
C
= 200 mA;
f = 1 MHz
1
V
V
BEsat
I
CES
base-emitter saturation voltage
collector-emitter cut-off current
1.1
200
V
μ
A
1.5
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
50
1
100
mA
20
f
T
transition frequency
20
MHz
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