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參數(shù)資料
| 型號： | BUW11W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BUW11W |
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
Fig.9
Collector-emitter saturation voltage as a
function of base current; typical values.
(1) I
C
= 1.5 A.
(2) I
C
= 3 A.
(3) I
C
= 5 A.
T
j
= 25
°
C; solid line: typical values; dotted line: maximum values.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB873
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
handbook, halfpage
MBC095
IC (A)
10
2
10
1
1
10
10
2
10
hFE
1
1V
VCE = 5 V
Fig.11 Test circuit resistive load.
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.12 Switching time waveforms with
resistive load.
handbook, halfpage
MBB730
t
90%
10%
IB
IB on
IC on
ton
ts
tf
tr
toff
IB off
IC
90%
10%
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUW12AF | Silicon diffused power transistors |
| BUW12F | Silicon diffused power transistors |
| BUW12AW | Silicon diffused power transistors |
| BUW12W | Silicon diffused power transistors |
| BUW84 | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUW12 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW1215 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN 700V 16A TO-247 |
| BUW12A | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-247 制造商:SPC Multicomp 功能描述:TRANSISTOR, NPN, TO-247 |
| BUW12A | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-247 |
| BUW12AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
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