參數(shù)資料
型號(hào): BUW11W
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 79K
代理商: BUW11W
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
Fig.2 Forward bias SOAR.
T
mb
25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
100
and t
p
0.6
μ
s.
IV - Repetitive pulse operation in this region is permissible provided V
BE
0 and t
p
5 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
handbook, full pagewidth
MGB948
1
10
10
2
10
3
10
4
VCE (V)
10
10
1
10
2
10
2
10
3
IC
(A)
(1)
(2)
I
II
III
IV
IC max
DC
BUW11W
BUW11AW
ICM max
相關(guān)PDF資料
PDF描述
BUW12AF Silicon diffused power transistors
BUW12F Silicon diffused power transistors
BUW12AW Silicon diffused power transistors
BUW12W Silicon diffused power transistors
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