參數(shù)資料
型號: BUW11W
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 79K
代理商: BUW11W
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
Fig.3 Power derating curve.
handbook, halfpage
0
50
Tmb (
o
C)
100
150
0
40
80
MGD283
Ptot max
(%)
Fig.4 Reverse bias SOAR.
(1) BUW11W.
(1) BUW11AW.
handbook, halfpage
(A)
0
400
1200
VCE (V)
0
MGB895
800
(2)
1
2
3
4
(1)
Fig.5
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.6
Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
(mA)
MGE239
250
200
100
0
min
VCEOsust
VCE (V)
相關(guān)PDF資料
PDF描述
BUW12AF Silicon diffused power transistors
BUW12F Silicon diffused power transistors
BUW12AW Silicon diffused power transistors
BUW12W Silicon diffused power transistors
BUW84 Silicon diffused power transistors
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