參數(shù)資料
型號: BUW11W
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁數(shù): 7/12頁
文件大?。?/td> 79K
代理商: BUW11W
1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
handbook, full pagewidth
VBEsat
VCEsat
(V)
0
10
2
MGB913
10
1
1
IC (A)
10
0.5
1.5
1.0
(1)
(2)
(3)
(4)
I
C
/I
B
= 5.
(1) V
BE
; T
j
= 25
°
C.
(2) V
BE
; T
j
= 100
°
C.
(3) V
CE
; T
j
= 25
°
C.
(4) V
CE
; T
j
= 25
°
C.
Fig.8 Base-emitter voltage as a function of base current; typical values.
handbook, full pagewidth
1.5
IB (A)
1.4
0.8
0
VBE
(V)
0.25
1.25
MGB910
1.2
1.0
1.0
0.5
0.75
(1)
(2)
(3)
T
j
= 25
°
C.
(1) I
C
= 5 A.
(2) I
C
= 3 A.
(3) I
C
= 1.5 A.
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