參數(shù)資料
型號： BUT11APX-1200
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN power transistor
封裝： BUT11APX-1200<SOT186A (TO-220F)|<<http://www.nxp.com/packages/SOT186A.html<1<week 32, 2004,;
文件頁數(shù)： 3/9頁
文件大?。?/td> 119K
代理商： BUT11APX-1200
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
-
-
2500
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Collector cut-off current
1
I
CES
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 C
V
EB
= 7 V; I
= 0 A
I
C
= 10 mA;
L = 25 mH
I
C
= 2.0 A; I
B
I
C
= 2.0 A; I
B
= 0.4 A
I
C
= 1 mA; V
= 5 V
I
C
= 500 mA; V
= 5 V
I
C
= 2 A; V
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
-
-
-
-
1.0
2.0
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
0.1
-
mA
V
550
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.15
0.91
25
30
18.5
15.5
1.0
1.5
-
47
25
-
V
V
13
20
13
-
DC current gain
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified8
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 2.5 A; I
= -I
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
-
-
-
0.5
3
0.3
μ
s
μ
s
μ
s
Switching times (inductive load)
I
= 2.5 A; I
B1
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
-
1.5
300
μ
s
ns
170
Switching times (inductive load)
I
= 2.5 A; I
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
= 100 C
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.8
300
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
April 1999
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BUT12A SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT56A NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE)
BUT56A POWER TRANSISTORS
BUT72 NPN MULTI-EPITAXIAL POWER TRANSISTOR
BUV22 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUT11APX-1200,127 功能描述:兩極晶體管 - BJT BUT11APX-1200/SOT186A/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT11ATU 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT11AX 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
BUT11AX,127 功能描述:兩極晶體管 - BJT BUT11AX/SOT186A/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUT11F 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*