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參數(shù)資料
| 型號(hào)： | BUT12A |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴(kuò)散硅功率晶體管（一般）的說(shuō)明 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | BUT12A |
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
MAX
1000
450
8
20
100
1.5
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 6.0A; I
B
= 1.2A
f = 16KHz
25
I
C
=6A,I
B1
=-I
B2
=1.2A,V
CC
=150V
1.0
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage(open collector)
Collector current (DC)
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
MAX
1000
450
5
8
4
8
100
150
150
UNIT
V
V
V
A
A
A
W
Tmb
25
-55
SYMBOL
I
CE
I
CES
PARAMETER
Collector-emitter cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 6.0A; I
B
= 1.2A
I
C
= 6.0A; I
B
= 1.2A
I
C
= 1.0A; V
CE
= 5V
MIN
MAX
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
1.5
1.5
50
V
V
10
V
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=6A,I
B1
=-I
B2
=1.2A,V
CC
=150V
I
C
=6A,I
B1
=-I
B2
=1.2A,V
CC
=150V
5
MHz
pF
5.0
1.0
s
s
ELECTRICAL CHARACTERISTICS
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
TO-220
BUT12A
SILICON DIFFUSED POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUT12A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
| BUT12AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUT12AI | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUT12AI,127 | 功能描述:兩極晶體管 - BJT BUT12AI/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT12ATU | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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