參數(shù)資料
型號(hào)： BUK866-400 IZ
廠商： NXP Semiconductors N.V.
英文描述： Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(帶邏輯電平保護(hù)的絕緣柵雙極型晶體管（IGBT）)
中文描述： 絕緣柵雙極晶體管保護(hù)邏輯電平IGBT的（帶邏輯電平保護(hù)的絕緣柵雙極型晶體管（IGBT的））
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 92K
代理商： BUK866-400 IZ
Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
BUK866-400 IZ
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
minimum footprint,
FR4 board (see Fig. 26).
50
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CG
Collector-gate zener
breakdown voltage
Reverse collector-emitter
breakdown voltage
Gate-emitter breakdown
voltage
Gate threshold voltage
Gate threshold voltage
2 mA
≤
-I
G
≤
5 mA; -40
≤
T
j
≤
150C
370
410
500
V
V
(BR)EC
I
E
= 10 mA
20
30
50
V
±
V
(BR)GES
I
G
=
±
1 mA
12
16
20
V
V
GE(TO)
V
GE(TO)
V
CE
= V
GE
; I
C
= 1 mA
V
CE
= V
GE
; I
C
= 1 mA;
-40
≤
T
j
≤
150C
V
CE
= 50 V; V
GE
= 0 V; T
j
= 25 C
1
1.5
-
2
V
V
0.6
2.4
I
CES
Zero gate voltage collector
current
Zero gate voltage collector
current
Reverse collector current
Reverse collector current
Gate emitter leakage current
-
0.01
10
μ
A
I
CES
T
j
= 125 C
-
0.01
1
mA
I
EC
I
EC
I
GES
V
CE
= -20 V
V
CE
= -20 V; T
j
= 125C
V
GE
=
±
6 V
T
j
= 150C
V
GE
= 4.5 V; I
C
= 8 A
V
GE
= 3.5 V; I
C
= 6 A;
-40
≤
T
j
≤
150C
-
-
-
-
-
-
0.2
2
0.1
5
1.2
1.2
5
20
1
100
2.2
2.2
mA
mA
μ
A
μ
A
V
V
V
CEsat
Collector-emitter on-state
voltage
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)CER
Collector-emitter clamp voltage
(peak value)
R
G
= 1 k
; I
C
= 10 A;
-40
≤
T
j
≤
150C; Inductive load; see
Figs. 23,24
370
410
500
V
g
fe
C
ies
C
oes
C
res
t
d off
t
f
t
c
E
off
Forward transconductance
V
CE
= 15 V; I
C
= 4 A
V
GE
= 0 V; V
CE
= 25 V; f = 1 MHz
5.5
15
20
S
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
940
95
30
1200
130
50
pF
pF
pF
Turn-off delay time
Fall time
Crossover Time
Turn-off Energy loss
I
C
= 8 A; V
CL
= 300 V; R
G
=
1 k
;
V
GE
= 5 V; T
j
= 125C;
Inductive load; see Figs. 20,21
-
-
-
-
13
6
12
13
18
10
-
-
μ
s
μ
s
μ
s
mJ
September 1998
2
Rev. 1.200
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參數(shù)描述
BUK866-400IZT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | SOT-404
BUK9006-55A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel Enhancement mode field-effect power Transistor
BUK9107-40ATC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426
BUK9107-40ATC /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9107-40ATC,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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