參數(shù)資料
型號: BUK6E4R0-75C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS FET
中文描述: 120 A, 75 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: PLASTIC, TO-262, I2PAK-3
文件頁數(shù): 11/14頁
文件大?。?/td> 187K
代理商: BUK6E4R0-75C
BUK6E4R0-75C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 August 2010
11 of 14
NXP Semiconductors
BUK6E4R0-75C
N-channel TrenchMOS FET
8.
Revision history
Table 7.
Document ID
BUK6E4R0-75C v.2
Modifications:
Revision history
Release date
20100830
Status changed from objective to product.
Various changes to content.
20100709
Data sheet status
Product data sheet
Change notice
-
Supersedes
BUK6E4R0-75C v.1
BUK6E4R0-75C v.1
Objective data sheet
-
-
相關(guān)PDF資料
PDF描述
BUK7105-40ATE N-channel TrenchPLUS standard level FET
BUK7107-40ATC N-channel TrenchPLUS standard level FET
BUK7108-40AIE N-channel TrenchPLUS standard level FET
BUK714R1-40BT N-channel TrenchPLUS standard level FET
BUK7207-30B N-channel TrenchMOS standard level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6E4R0-75C,127 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7105-40AIE 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 40V 155A 5-Pin(4+Tab) D2PAK
BUK7105-40AIE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7105-40AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7105-40ATE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchPLUS standard level FET